Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells

被引：1
|
作者：
Golaszewska, K.
Kaminska, E.
Piotrowska, A.
Rutkowski, J.
Kruszka, R.
Kowalczyk, E.
Papis, E.
Wawro, A.
Piotrowski, T. T.
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 04期
关键词：
D O I：
10.1002/pssa.200674149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO4 used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO4 were formed in a reactive process in Ar-O-2 atmosphere, from Cd and Ru1Si1 targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO4 transparent films instead of conventional metal-based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D* increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1051 / 1055
页数：5
相关论文
共 50 条
  • [31] Ohmic contacts to Al-rich AlGaN heterostructures
    Douglas, E. A.
    Reza, S.
    Sanchez, C.
    Koleske, D.
    Allerman, A.
    Klein, B.
    Armstrong, A. M.
    Kaplar, R. J.
    Baca, A. G.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (08):
  • [32] Low resistance Al-nGaAs ohmic contacts
    Meskinis, S
    Slapikas, K
    Smetona, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (09) : 907 - 910
  • [33] Formation of transparent and ohmic ZnO:Al/MoSe2 contacts for bifacial Cu(In,Ga)Se2 solar cells and tandem structures
    Rostan, PJ
    Mattheis, J
    Bilger, G
    Rau, U
    Werner, JH
    THIN SOLID FILMS, 2005, 480 : 67 - 70
  • [34] OHMIC CONTACTS OF AUGENI AND AG/AUGENI TO N-GASB WITH VARIOUS SINTERING TEMPERATURES
    SU, YK
    JUANG, FS
    GAN, KJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05): : 914 - 916
  • [35] Structural processes in gold-based metallization during the formation of ohmic contacts to GaSb
    Piotrowska, A
    Kaminska, E
    Guziewicz, M
    Mizera, E
    Dynowska, E
    Lin, XW
    Rouvimov, S
    LilientalWeber, Z
    Kwiatkowski, S
    POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II, 1996, 403 : 669 - 674
  • [36] Ohmic contacts of AuGeNi and Ag/AuGeNi to n-GaSb with various sintering temperatures
    Su, Yan Kuin, 1600, (30):
  • [37] Effects of sulfur passivation of GaSb on the thermal stability of Al/n-GaSb contacts
    Eftekhari, Ghader
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 A): : 564 - 567
  • [38] Effects of sulfur passivation of GaSb on the thermal stability of Al/n-GaSb contacts
    Eftekhari, G
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 564 - 567
  • [39] COBALT DISILICIDE INTERCELL OHMIC CONTACTS FOR MULTIJUNCTION PHOTOVOLTAIC ENERGY CONVERTERS
    KALKHORAN, NM
    MARUSKA, HP
    NAMAVAR, F
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 1980 - 1982
  • [40] Comparative studies on low-resistance Pd-based ohmic contacts on p-GaAsSb
    Jang, J. H.
    Cho, H. K.
    Bae, J. W.
    Adesida, I.
    Pan, N.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (05) : H389 - H392
12345