Performance Analysis of Rectangular and Trapezoidal TG Bulk FinFETs for 20 nm Gate Length

被引：0

作者：

Gaurav, Ankit ^{[1
]}

Gill, Sandeep S. ^{[1
]}

Kaur, Navneet ^{[1
]}

机构：

[1] Guru Nanak Dev Engn Coll, Dept Elect & Commun Engn, Ludhiana 141006, Punjab, India

来源：

2015 ANNUAL IEEE INDIA CONFERENCE (INDICON) | 2015年

关键词：

Rectangular; Trapezoidal; TG FinFETs; Bulk; Device; numerical simulation; DESIGN; MOSFETS;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

FinFETs are the best alternatives or substitutes for the continuous downscaling of conventional MOSFETs. In this paper, the electrical performance of rectangular and trapezoidal TG bulk FinFETs for 20 nm gate length has been analyzed using 3D numerical device simulator. It was found that changing the fin shape from rectangular to trapezoidal leads to reduction in Short Channel Effects like leakage current, drain induced barrier lowering and subthreshold swing. The effects of change in equivalent fin width while moving from rectangular to trapezoidal fin shape on the device performance has also been studied.

引用

页数：5

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