Energy-Efficient FinFET- Versus TFET-Based STT-MRAM Bitcells

被引：2
|
作者：
Musello, Ariana [1 ]
Perez, Santiago S. [1 ]
Villegas, Marco [1 ]
Procel, Luis Miguel [1 ]
Taco, Ramiro [1 ]
Trojman, Lionel [1 ,2 ]
机构：
[1] Univ San Francisco Quito USFQ, Inst Micro & Nanoelect IMNE, Quito 170901, Ecuador
[2] Inst Super Elect Paris ISEP, 10 Rue Vanves, F-92130 Issy Les Moulineaux, France
来源：
2022 IEEE 13TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2022年
关键词：
STT-MRAM; double-barrier magnetic tunnel junction (DMTJ); tunnel FET (TFET); FinFET; ultralow voltage;
D O I：
10.1109/LASCAS53948.2022.9789086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at the circuit-level, benchmarking TFET-against FinFET-based bitcells focusing on their write operation. Different bitcell configurations are tested to find optimal minimum energy design points using both technologies in a range of ultralow supply voltages. TFETs were found to be the optimal access device for supply voltages under or equal to 0.4V because of their significantly more robust behavior and lower write energy consumption, albeit higher write delays and bigger area for higher voltages.
引用
收藏
页码：29 / 32
页数：4
相关论文
共 50 条
  • [1] Performance Benchmarking of FinFET- and TFET-Based STT-MRAM Bitcells Operating at Ultra-Low Voltages
    Perez, Santiago S.
    Bedoya, Alessandro
    Procel, Luis Miguel
    Taco, Ramiro
    2023 IEEE 14TH LATIN AMERICA SYMPOSIUM ON CIRCUITS AND SYSTEMS, LASCAS, 2023, : 48 - 51
  • [2] Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications
    Garzon, Esteban
    Lanuzza, Marco
    Taco, Ramiro
    Strangio, Sebastiano
    ELECTRONICS, 2021, 10 (15)
  • [3] Exploiting TFET-based technology for energy-efficient STT-MRAM cells
    Perez, Santiago S.
    Bedoya, Alessandro
    Miguel Procel, Luis
    Taco, Ramiro
    INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS, 2023, 73 (01) : 15 - 24
  • [4] Implementation of FinFET based STT-MRAM Bitcell
    Bhattacharya, Arundhati
    Pal, Soumitra
    Islam, Aminul
    2014 INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES (ICACCCT), 2014, : 435 - 439
  • [5] STT-MRAM Technology For Energy-Efficient Cryogenic Memory Applications
    Garzon, Esteban
    Yavits, Leonid
    Teman, Adam
    Lanuzza, Marco
    2023 IEEE 14TH LATIN AMERICA SYMPOSIUM ON CIRCUITS AND SYSTEMS, LASCAS, 2023, : 186 - 189
  • [6] A Disturbance-Free Energy-Efficient STT-MRAM Based on Complementary Polarizers
    Qu, Lianhua
    Zhao, Zhenyu
    Wang, Yao
    Tang, Haoyue
    Li, Huan
    Deng, Quan
    Li, Peng
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (10) : 1288 - 1291
  • [7] Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
    Garzon, Esteban
    De Rose, Raffaele
    Crupi, Felice
    Trojman, Lionel
    Teman, Adam
    Lanuzza, Marco
    SOLID-STATE ELECTRONICS, 2021, 184
  • [8] Toward Energy-Efficient STT-MRAM Design With Multi-Modes Reconfiguration
    Cai, Hao
    Chen, Juntong
    Zhou, Yongliang
    Zhao, Weisheng
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (07) : 2633 - 2639
  • [9] Embedded STT-MRAM for Energy-efficient and Cost-effective Mobile Systems
    Kang, Seung H.
    2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS, 2014,
  • [10] Energy-Efficient Dynamic Data Encoding for Multi-Level STT-MRAM
    Alfailakawi, Mohammad Gh.
    Ahmad, Imtiaz
    Elghandour, Sarah
    2018 31ST INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2018 17TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS (VLSID & ES), 2018, : 428 - 433
12345