Embedded STT-MRAM for Energy-efficient and Cost-effective Mobile Systems

被引：0

作者：

Kang, Seung H. ^{[1
]}

机构：

[1] Qualcomm Technol Inc, Adv Memory Technol, San Diego, CA 92121 USA

来源：

2014 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TECHNOLOGY): DIGEST OF TECHNICAL PAPERS | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

STT-MRAM is a logic-friendly nonvolatile memory that can realize a combination of high speed, low energy, and high endurance. Embedded STT-MRAM is positioned attractively not only for emerging low standby-power connectivity systems such as wearables, IOT (Internet-of-Things), and secure elements, but also for high-performance mobile SOC as an embedded nonvolatile working memory. With recent breakthroughs in CoFeB-based perpendicular magnetic tunnel junctions (MTJ), embedded STT-MRAM has become more energy-efficient and cost-effective in conjunction with robust data retention, scalable for advanced logic nodes.

引用

页数：2

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