Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

被引：0

作者：

Cai, Linlin ^{[1
]}

Chen, Wangyong ^{[1
]}

Du, Gang ^{[1
]}

Kang, Jinfeng ^{[1
]}

Zhang, Xing ^{[1
,2
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

来源：

2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2018年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The self-heating behavior of horizontally stacked gate-all-around (GAA) nanosheet transistor is evaluated to investigate the spatial temperature profile and heat flux distribution considering the simple back-end-of line (BEOL). The impacts of related device geometry and material thermal conductivity are given to provide guidelines for mitigating self-heating effect (SHE) in device design. The results indicate that self-heating in nanoscale device should be attached great importance in achieving robust thermal management and precise reliability prediction.

引用

页数：2

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