An analysis of stress evolution in stacked GAA transistors

被引：0

作者：

Reboh, Shay ^{[1
]}

Coquand, Remi ^{[1
]}

Augendre, Emmanuel ^{[1
]}

Barraud, Sylvain ^{[1
]}

Maitrejean, Sylvain ^{[1
]}

Vinet, Maud ^{[1
]}

Faynot, Olivier ^{[1
]}

Loubet, Nicolas ^{[2
]}

Guillorn, Michael ^{[2
]}

Fetterolf, Shawn ^{[2
]}

Yamashita, Tenko ^{[2
]}

机构：

[1] CEA, LETI, Minatec Campus,17 Rue Martyrs, F-38054 Grenoble, France

[2] IBM Corp, 257 Fuller Rd, Albany, NY 12203 USA

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used Finite Element Method to evaluate the stress evolution along a FEOL integration in Gate-All-Around transistors of stacked channels configuration. Hypothesis are done about the materials behavior and dimensions for 5 nm node to evaluate the upper and lower stress limits due to source and drain stressor effect. For the most probable configuration, slightly tensile Si channels are obtained either for pMOS and nMOS. Alternative solutions for stressing the channel in NS configuration would be essential.

引用

页码：206 / 207

页数：2

共 50 条

[1] Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors
Cai, Linlin
Chen, Wangyong
Du, Gang
Kang, Jinfeng
Zhang, Xing
Liu, Xiaoyan
[J]. 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2018,
[2] 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing
Barraud, S.
Previtali, B.
Vizioz, C.
Hartmann, J. M.
Sturm, J.
Lassarre, J.
Perrot, C.
Rodriguez, Ph
Loup, V
Magalhaes-Lucas, A.
Kies, R.
Romano, G.
Casse, M.
Bernier, N.
Jannaud, A.
Grenier, A.
Andrieu, F.
[J]. 2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
[3] Performance analysis of gate stacked with nitride GAA-TFET
Sharma, Nitika
Garg, Nidhi
Kaur, Gurpreet
[J]. MATERIALS TODAY-PROCEEDINGS, 2020, 28 : 1683 - 1689
[4] AN ANALYTICAL MODEL FOR GAA TRANSISTORS
TERAO, A
VANDEWIELE, F
[J]. MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 233 - 236
[5] Threshold Voltage Variability in Nanosheet GAA Transistors
Vardhan, P. Harsha
Amita
Ganguly, Swaroop
Ganguly, Udayan
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (10) : 4433 - 4438
[6] Small Signal Analysis of Stacked Gate GAA FinFET at THz Frequency for RF and Microwave Applications
Kumar, Bhavya
Chaujar, Rishu
[J]. 2022 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE, RFM, 2022,
[7] Stacked Nanowires/Nanosheets GAA MOSFET From Technology to Design Enablement
Barbe, J. -Ch.
Barraud, S.
Rozeau, O.
Martinie, S.
Lacord, J.
Blaise, P.
Zeng, Z.
Bourdet, L.
Triozon, F.
Niquet, Y.
[J]. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 5 - 8
[8] Evolution of trnF(GAA) pseudogenes in cruciferous plants
Schmickl, Roswitha
Kiefer, Christiane
Dobes, Christoph
Koch, Marcus A.
[J]. PLANT SYSTEMATICS AND EVOLUTION, 2009, 282 (3-4) : 229 - 240
[9] Evolution of trnF(GAA) pseudogenes in cruciferous plants
Roswitha Schmickl
Christiane Kiefer
Christoph Dobeš
Marcus A. Koch
[J]. Plant Systematics and Evolution, 2009, 282 : 229 - 240
[10] Evolution of Stacked Autoencoders
Silhan, Tim
Oehmcke, Stefan
Kramer, Oliver
[J]. 2019 IEEE CONGRESS ON EVOLUTIONARY COMPUTATION (CEC), 2019, : 823 - 830

← 1 2 3 4 5 →