Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

被引：0
|
作者：
Cai, Linlin [1 ]
Chen, Wangyong [1 ]
Du, Gang [1 ]
Kang, Jinfeng [1 ]
Zhang, Xing [1 ,2 ]
Liu, Xiaoyan [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
来源：
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2018年
关键词：
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The self-heating behavior of horizontally stacked gate-all-around (GAA) nanosheet transistor is evaluated to investigate the spatial temperature profile and heat flux distribution considering the simple back-end-of line (BEOL). The impacts of related device geometry and material thermal conductivity are given to provide guidelines for mitigating self-heating effect (SHE) in device design. The results indicate that self-heating in nanoscale device should be attached great importance in achieving robust thermal management and precise reliability prediction.
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页数：2
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