High resistance to stress-migration of [111]textured Al electrodes for surface acoustic wave devices

被引：0
|
作者：
Kamijo, A [1 ]
Matsukura, N [1 ]
机构：
[1] NEC Corp Ltd, Fundamental Res Labs, Miyamae Ku, Kanagawa 216, Japan
来源：
STRESS INDUCED PHENOMENA IN METALLIZATION - FOURTH INTERNATIONAL WORKSHOP | 1998年 / 418期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface acoustic wave devices with highly textured Al[111] film electrodes, grown on an ultrathin metal underlayer approximate to 1 nm thick by ion-beam sputtering, have superior stress-migration resistance to evaporated polycrystalline Al electrodes. Measured lifetimes were more than 3000 times as long.
引用
收藏
页码：239 / 249
页数：11
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