High resistance to stress-migration of [111]textured Al electrodes for surface acoustic wave devices

被引：0

作者：

Kamijo, A ^{[1
]}

Matsukura, N ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Miyamae Ku, Kanagawa 216, Japan

来源：

STRESS INDUCED PHENOMENA IN METALLIZATION - FOURTH INTERNATIONAL WORKSHOP | 1998年 / 418期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface acoustic wave devices with highly textured Al[111] film electrodes, grown on an ultrathin metal underlayer approximate to 1 nm thick by ion-beam sputtering, have superior stress-migration resistance to evaporated polycrystalline Al electrodes. Measured lifetimes were more than 3000 times as long.

引用

页码：239 / 249

页数：11

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