Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

被引：87
|
作者：
Aubert, Thierry [1 ]
Elmazria, Omar [1 ]
Assouar, Badreddine [1 ]
Bouvot, Laurent [1 ]
Oudich, Mourad [1 ]
机构：
[1] Nancy Univ, CNRS, UMR 7198, Inst Jean Lamour, F-54506 Vandoeuvre Les Nancy, France
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期
关键词：
aluminium compounds; annealing; atomic force microscopy; III-V semiconductors; scanning electron microscopy; semiconductor thin films; surface acoustic wave delay lines; wide band gap semiconductors; X-ray diffraction; SENSORS; FILMS;
D O I：
10.1063/1.3430042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 degrees C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 degrees C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430042]
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页数：3
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