Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions

被引：7

作者：

Kohlhepp, Benedikt ^{[1
]}

Kuring, Carsten ^{[2
]}

Peller, Stefan ^{[1
]}

Kuebrich, Daniel ^{[1
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Electromagnet Fields, Cauerstr 7, D-91058 Erlangen, Germany

[2] Tech Univ Berlin, Chair Power Elect, Einsteinufer 19, D-10587 Berlin, Germany

来源：

2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年

关键词：

Gallium Nitride (GaN); Conduction losses; Measurement;

D O I：

10.23919/epe20ecceeurope43536.2020.9215744

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.

引用

页数：10

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