Temperature dependence analysis of on-state resistance of a high-voltage LDMOS at very high temperatures

The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures, and analyzes performance of leakage current and intrinsic parameters of a LDMOS from 25°C to 300 °C. It may be concluded that the maximal applied temperature of a LDMOS is determined by the reverse leakage current of a pn junction across gate and drain, and the relationship between on resistance and temperature is (T/T1)y(y is 1.5 to 2.5).