Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions

被引：7
|
作者：
Kohlhepp, Benedikt [1 ]
Kuring, Carsten [2 ]
Peller, Stefan [1 ]
Kuebrich, Daniel [1 ]
机构：
[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Electromagnet Fields, Cauerstr 7, D-91058 Erlangen, Germany
[2] Tech Univ Berlin, Chair Power Elect, Einsteinufer 19, D-10587 Berlin, Germany
来源：
2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年
关键词：
Gallium Nitride (GaN); Conduction losses; Measurement;
D O I：
10.23919/epe20ecceeurope43536.2020.9215744
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.
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收藏
页数：10
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