Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions

被引：7
|
作者：
Kohlhepp, Benedikt [1 ]
Kuring, Carsten [2 ]
Peller, Stefan [1 ]
Kuebrich, Daniel [1 ]
机构：
[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Electromagnet Fields, Cauerstr 7, D-91058 Erlangen, Germany
[2] Tech Univ Berlin, Chair Power Elect, Einsteinufer 19, D-10587 Berlin, Germany
来源：
2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE) | 2020年
关键词：
Gallium Nitride (GaN); Conduction losses; Measurement;
D O I：
10.23919/epe20ecceeurope43536.2020.9215744
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.
引用
收藏
页数：10
相关论文
共 50 条
  • [31] Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs
    Tang, Zhikai
    Huang, Sen
    Tang, Xi
    Li, Baikui
    Chen, Kevin J.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2785 - 2792
  • [32] Modelling GaN-HEMT Dynamic ON-state Resistance in High Frequency Power Converter
    Li, Ke
    Videt, Arnaud
    Idir, Nadir
    Evans, Paul
    Johnson, Mark
    [J]. 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 1949 - 1955
  • [33] Dynamic on-state resistance instability characterization of a multi-chip-GaN MIS-HEMTs cascode power module
    Elangovan, Surya
    Cheng, Stone
    Jang, Wen-Yea
    Chang, Edward Yi
    [J]. ELECTRONICS LETTERS, 2023, 59 (13)
  • [34] Gate threshold voltage instability and on-resistance degradation under reverse current conduction stress on E-mode GaN-HEMTs
    Nakayama, T.
    Mannen, T.
    Nakajima, A.
    Isobe, T.
    [J]. MICROELECTRONICS RELIABILITY, 2020, 114
  • [35] Accurate Measurement of Dynamic ON-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter
    Li, Ke
    Videt, Arnaud
    Idir, Nadir
    Evans, Paul Leonard
    Johnson, Christopher Mark
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (09) : 9650 - 9660
  • [36] Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs
    Wu, JunFeng
    Zhu, YongSheng
    Deng, GuangMin
    Zhao, ShuFeng
    Pe, Yi
    [J]. 17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
  • [37] A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA
    Yang, Fu-Jen
    Gong, Jeng
    Su, Ru-Yi
    Huo, Ker-Hsiao
    Tsai, Chun-Lin
    Cheng, Chih-Chang
    Liou, Ruey-Hsin
    Tuan, Hsiao-Chin
    Huang, Chih-Fang
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (09) : 2847 - 2853
  • [38] High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
    Jiang, Huaxing
    Zhu, Renqiang
    Lyu, Qifeng
    Lau, Kei May
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (04) : 530 - 533
  • [39] High temperature operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity
    Nomura, Takehiko
    Kambayashi, Hiroshi
    Masuda, Mitsuru
    Ishii, Sonomi
    Ikeda, Nariaki
    Lee, Jiang
    Yoshida, Seikoh
    [J]. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 313 - +
  • [40] High-temperature operation of AlGaN/GaN HFET with a low ON-state resistance, high breakdown voltage, and fast switching
    Nomura, Takehiko
    Kambayashi, Hiroshi
    Masuda, Mitsuru.
    Ishii, Sonomi
    Ikeda, Nariaki
    Lee, Jiang
    Yoshida, Seikoh
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) : 2908 - 2913
12345