A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability

A measurement circuit for the characterization of trapping effects in GaN HEMTs is presented. The circuit is based on the operating principle of separating the high-voltage source from the load current generation to ensure maximum flexibility. Due to this separation, the setup can run arbitrary pulse profiles, it is usable in single-pulse and constantly pulsed operation, the maximum measurement duration is unlimited, and both hard- and soft-switched dynamic on-state resistance evaluations are possible. The setup allows to change switching and measurement current independently, allowing for isothermal hard-switching characterization. With the proposed setup, the dynamic on-state resistance measurement is valid 100 ns after the falling VDS flank. The proposed setup can be helpful to dissect the trap capture and emission dynamics of the state-of-the-art GaN power transistors and evaluate the behavior of the dynamic on-state resistance.