Measurement Method for the Dynamic On-State Resistance of GaN Semiconductors

被引：3
|
作者：
Sir, Michal [1 ]
Feno, Ivan [2 ]
机构：
[1] Brno Univ Technol, Fac Elect Engn & Commun, Brno, Czech Republic
[2] Bel Power Solut GmbH, Res & Dev, Uster, Switzerland
来源：
2018 2ND EUROPEAN CONFERENCE ON ELECTRICAL ENGINEERING AND COMPUTER SCIENCE (EECS 2018) | 2018年
关键词：
GaN semiconductor; Novel RDSon Measurement method; Dynamic On state resistance; Dynamic RDSon;
D O I：
10.1109/EECS.2018.00106
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Defects in material structure effects the ON-state resistance of GaN devices, which can't be considered constant in power loss evaluation when considering high operating frequency. The aim of this article is to propose a novel method to measure the dynamic RDSon. The method resolves a typical disadvantage of former methods e.g. an unclear clamping diode voltage drop in former approaches. Test results obtained with the new method are presented for 3 samples provided by different suppliers. Results shows that each sample exhibits a different dynamic RDSon characteristics what indicates a different process technology used to manufacture the device.
引用
收藏
页码：543 / 546
页数：4
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