GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling

被引：9
|
作者：
Li, Ke [1 ]
Evans, Paul [1 ]
Johnson, Mark [1 ]
机构：
[1] Univ Nottingham, Power Elect Machine & Control Grp, Nottingham NG7 2RD, England
来源：
2016 IEEE 17TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2016年
基金：
英国工程与自然科学研究理事会;
关键词：
GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model;
D O I：
10.1109/COMPEL.2016.7556732
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (R-DS(on)) values. Thus, dynamic R-DS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic R-DS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of R-DS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that R-DS(on) values of this device would increase due to trapping effects.
引用
收藏
页数：7
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