Formation of porous layers with different morphologies during anodic etching of n-InP

被引：0
|
作者：
Langa, S [1 ]
Tiginyanu, IM
Carstensen, J
Christophersen, M
Föll, H
机构：
[1] Univ Kiel, Fac Engn, D-24143 Kiel, Germany
[2] Tech Univ Moldova, Inst Phys Appl, Lab Low Dimens Semicond Struct, Kishinev 2004, Moldova
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 11期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Two different morphologies of porous layers were observed in (100)-oriented n-InP anodically etched in an aqueous solution of HCl. At high current density (60 mA/cm(2)) anodization leads to the formation of so-called current-line oriented pores. When the current density decreased to values lower than 5 mA/cm(2) the morphology of the porous layers sharply changed and the pores began to grow along definite <111> crystallographic directions. (C) 2000 The Electrochemical Society. S1099-0062(00)06-078-8. All rights reserved.
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页码：514 / 516
页数：3
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