Formation of porous layers with different morphologies during anodic etching of n-InP

被引：0
|
作者：
Langa, S [1 ]
Tiginyanu, IM
Carstensen, J
Christophersen, M
Föll, H
机构：
[1] Univ Kiel, Fac Engn, D-24143 Kiel, Germany
[2] Tech Univ Moldova, Inst Phys Appl, Lab Low Dimens Semicond Struct, Kishinev 2004, Moldova
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Two different morphologies of porous layers were observed in (100)-oriented n-InP anodically etched in an aqueous solution of HCl. At high current density (60 mA/cm(2)) anodization leads to the formation of so-called current-line oriented pores. When the current density decreased to values lower than 5 mA/cm(2) the morphology of the porous layers sharply changed and the pores began to grow along definite <111> crystallographic directions. (C) 2000 The Electrochemical Society. S1099-0062(00)06-078-8. All rights reserved.
引用
收藏
页码：514 / 516
页数：3
相关论文
共 50 条
  • [31] Dependence of Current on Porous Layer Structure during Anodization of n-InP in Aqueous KOH Electrolytes
    Lynch, Robert P.
    Quill, Nathan
    O'Dwyer, Colm
    Buckley, D. Noel
    PITS AND PORES 5: A SYMPOSIUM IN HONOR OF DAVID LOCKWOOD, 2013, 50 (37): : 191 - 203
  • [32] Thin anodic oxides on n-InP studied by photocurrent transients and surface analysis
    Simon, N
    Gérard, I
    Vigneron, J
    Etcheberry, A
    THIN SOLID FILMS, 2001, 400 (1-2) : 134 - 138
  • [33] FAST PHOTOELECTROCHEMICAL ETCHING OF QUARTER-MICROMETER DIFFRACTION GRATINGS IN N-INP
    MATZ, R
    ZIRRGIEBEL, J
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3402 - 3406
  • [34] Selective etching of n-InP(100) triggered at surface dislocations induced by nanoscratching
    Gassilloud, R
    Michler, J
    Ballif, C
    Gasser, P
    Schmuki, P
    ELECTROCHIMICA ACTA, 2006, 51 (11) : 2182 - 2187
  • [35] Effect of Current Density on Pore Formation in n-InP in KOH
    Quill, N.
    Lynch, R. P.
    O'Dwyer, C.
    Buckley, D. N.
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6, 2013, 58 (08): : 25 - 38
  • [36] ANODIC FORMATION OF POROUS LAYERS WITH A GIVEN STRUCTURE ON N-TYPE SILICON
    IZIDINOV, SO
    BLOKHINA, AP
    NAZAROV, VN
    JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1992, 65 (05): : 875 - 879
  • [37] Formation of porous Al particles by anisotropic anodic etching
    Yanagishita, Takashi
    Imaizumi, Masahiko
    Kondo, Toshiaki
    Masuda, Hideki
    ELECTROCHEMISTRY COMMUNICATIONS, 2017, 78 : 26 - 28
  • [38] SOME SPECULATIONS ON THE ETCHING MECHANISM OF (100) N-GAP AND N-INP IN HCL SOLUTIONS
    HSIEH, HF
    SHIH, HC
    MATERIALS CHEMISTRY AND PHYSICS, 1992, 32 (04) : 374 - 379
  • [39] The Regularities of Radiation Defect Formation at the Interface Metal - n-InP
    Soboleva, E. G.
    Litvinenko, V. V.
    Krit, T. B.
    2016 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2016,
  • [40] Pattern Formation during Anodic Etching of Semiconductors
    Foell, H.
    Carstensen, J.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) : D357 - D365
12345