Morphologies and Photoluminescence Properties of Porous n-InP

被引：0
|
作者：
Suchikova, Y. [1 ]
Bogdanov, I. [1 ]
Onishchenko, S. [1 ]
Vambol, S. [2 ]
Vambol, V. [2 ]
Kondratenko, O. [2 ]
机构：
[1] Berdyansk State Pedag Univ, Dept Vocat Educ, Berdyansk, Ukraine
[2] NUCDU, Dept Appl Mech, Kharkov, Ukraine
来源：
PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2017年
关键词：
porous layers; electrochemical etching; photoluminescence; nanostructures; indium phosphide; PORE FORMATION; TEMPERATURE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3 - 11nm.
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页数：5
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