A Physically Based Scalable SPICE Model for Silicon Carbide Power MOSFETs

被引：0

作者：

He, Canzhong ^{[1
]}

Victory, James ^{[2
]}

Yazdi, Mehrdad Baghaie ^{[2
]}

Lee, Kwangwon ^{[3
]}

Domeij, Martin ^{[3
]}

Allerstam, Fredrik ^{[3
]}

Neyer, Thomas ^{[4
]}

机构：

[1] ON Semicond, Design Syst Technol, Mt Top, PA USA

[2] ON Semicond, Design Syst Technol, Dornach, Germany

[3] ON Semicond, Technol Dev, Kista, Sweden

[4] ON Semicond, Technol Dev, Dornach, Germany

来源：

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes a novel physical and scalable SPICE model for Silicon Carbide (SiC) power MOSFETs. The model is based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. One model applies to the entire technology instead of conventional discrete models for each device size and process variation. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with On Semiconductor's advanced 1200V SiC MOSFET technology.

引用

页码：2678 / 2684

页数：7

共 50 条

[11] Gate Capacitance Characterization of Silicon Carbide and Silicon Power MOSFETs Revisited
Stark, Roger
Tsibizov, Alexander
Kovacevic-Badstuebner, Ivana
Ziemann, Thomas
Grossner, Ulrike
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (09) : 10572 - 10584
[12] Simulating power MOSFETs with SPICE
1600, Publ by Intertec International, Inc., Ventura, CA, USA
[13] Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs
Rashed, Kazi
Wilkins, R.
Akturk, A.
Dwivedi, R. C.
Gersey, B. B.
2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2014,
[14] Space and Terrestrial Radiation Response of Silicon Carbide Power MOSFETs
Akturk, Akin
McGarrity, James M.
Wilkins, Richard
Markowski, Adam
Cusack, Brendan
2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2017, : 237 - 241
[15] Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets
Janabi, Ameer
Shillaber, Luke
Ying, Wucheng
Mu, Wei
Hu, Borong
Jiang, Yunlei
Iosifidis, Nikolaos
Ran, Li
Long, Teng
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (08) : 9614 - 9628
[16] Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs
Berthou, Maxime
Godignon, Philippe
Millan, Jose
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (09) : 4970 - 4977
[17] A physically based SPICE model for RRAMs including RTN
Gonzalez-Cordero, G.
Gonzalez, M. B.
Campabadal, F.
Jimenez-Molinos, F.
Roldan, J. B.
2020 XXXV CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), 2020,
[18] Silicon Carbide PiN Physically-Based Model Implemented in the Pspice Circuit Simulator
Gonzalez, L. H.
Claudio, A.
Rodriguez, M. A.
Ponce, M.
Rosales, P.
Zuniga-I, C.
EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 3777 - +
[19] Static and dynamic simulation of a physically-based model of silicon carbide PiN diode
Hernández L.
Arzate G.
Brito Z.
Rodríguez M.
Informacion Tecnologica, 2010, 21 (05): : 45 - 50
[20] The compact d.c. electrothermal model of power MOSFETs for SPICE
Zarebski, Janusz
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2010, 23 (02) : 140 - 150

← 1 2 3 4 5 →