A Physically Based Scalable SPICE Model for Silicon Carbide Power MOSFETs

被引：0

作者：

He, Canzhong ^{[1
]}

Victory, James ^{[2
]}

Yazdi, Mehrdad Baghaie ^{[2
]}

Lee, Kwangwon ^{[3
]}

Domeij, Martin ^{[3
]}

Allerstam, Fredrik ^{[3
]}

Neyer, Thomas ^{[4
]}

机构：

[1] ON Semicond, Design Syst Technol, Mt Top, PA USA

[2] ON Semicond, Design Syst Technol, Dornach, Germany

[3] ON Semicond, Technol Dev, Kista, Sweden

[4] ON Semicond, Technol Dev, Dornach, Germany

来源：

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes a novel physical and scalable SPICE model for Silicon Carbide (SiC) power MOSFETs. The model is based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. One model applies to the entire technology instead of conventional discrete models for each device size and process variation. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with On Semiconductor's advanced 1200V SiC MOSFET technology.

引用

页码：2678 / 2684

页数：7

共 50 条

[21] Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode
Zhou, Xintian
Wang, Yan
Yue, Ruifeng
Dai, Gang
Li, Juntao
IET POWER ELECTRONICS, 2016, 9 (15) : 2803 - 2807
[22] Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs
Philipps, Daniel A.
Peftitsis, Dimosthenis
IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY, 2023, 4 : 519 - 533
[23] Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
Feng, Haonan
Yang, Sheng
Liang, Xiaowen
Zhang, Dan
Pu, Xiaojuan
Cui, Xu
Wang, Haiyang
Sun, Jing
Yu, Xuefeng
Guo, Qi
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 16 (09) : 1423 - 1429
[24] Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs
Nakada, Y.
Kuboyama, S.
Mizuta, E.
Takeyama, A.
Ohshima, T.
Shindou, H.
2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2022, : 101 - 104
[25] A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs
Fayyaz, Asad
Romano, Gianpaolo
Urresti, Jesus
Riccio, Michele
Castellazzi, Alberto
Irace, Andrea
Wright, Nick
ENERGIES, 2017, 10 (04):
[26] Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs
Wang, Zhiqiang
Chinthavali, Madhu
Campbell, Steven
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 6, 2016, 75 (12): : 145 - 152
[27] A physically based quantum correction model for DG MOSFETs
Karner, Markus
Wagner, Martin
Grasser, Tibor
Kosina, Hans
TRANSISTOR SCALING- METHODS, MATERIALS AND MODELING, 2006, 913 : 163 - +
[28] Forward and reverse recovery spice model of a JBS silicon carbide diode
Giesselmann, M
Edwards, R
Bayne, S
Kaplan, S
Shaffer, E
Proceedings of the 26th International Power Modulator Symposium and 2004 High Voltage Workshop, Conference Record, 2004, : 364 - 367
[29] A Physically Based Fluorescent Lamp Model for a SPICE or a Simulink Environment
Holloway, Arran J.
Tozer, Richard C.
Stone, Dave A.
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (09) : 2101 - 2110
[30] SPICE model simulates RF MOSFETs
不详
MICROWAVES & RF, 1998, 37 (08) : 52 - 52

← 1 2 3 4 5 →