A Physically Based Scalable SPICE Model for Silicon Carbide Power MOSFETs

被引：0

作者：

He, Canzhong ^{[1
]}

Victory, James ^{[2
]}

Yazdi, Mehrdad Baghaie ^{[2
]}

Lee, Kwangwon ^{[3
]}

Domeij, Martin ^{[3
]}

Allerstam, Fredrik ^{[3
]}

Neyer, Thomas ^{[4
]}

机构：

[1] ON Semicond, Design Syst Technol, Mt Top, PA USA

[2] ON Semicond, Design Syst Technol, Dornach, Germany

[3] ON Semicond, Technol Dev, Kista, Sweden

[4] ON Semicond, Technol Dev, Dornach, Germany

来源：

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes a novel physical and scalable SPICE model for Silicon Carbide (SiC) power MOSFETs. The model is based on process and layout parameters, enabling design optimization through a direct link between SPICE, physical design, and process technology. One model applies to the entire technology instead of conventional discrete models for each device size and process variation. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with On Semiconductor's advanced 1200V SiC MOSFET technology.

引用

页码：2678 / 2684

页数：7

共 50 条

[31] Physics-based scalable threshold-voltage model for strained-silicon MOSFETs
Chandrasekaran, K
Zhou, X
Chiah, SB
NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 179 - 182
[32] The FinFET effect in Silicon Carbide MOSFETs
Udrea, F.
Naydenov, K.
Kang, H.
Kato, T.
Kagoshima, E.
Nishiwaki, T.
Fujiwara, H.
Kimoto, T.
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 75 - 78
[33] Silicon carbide MOSFETS challenge IGBTs
CREE, Durham, NC, United States
Power Electron. Technol., 2008, 9 (14-19):
[34] Interface Traps in Silicon Carbide MOSFETs
Cochrane, C. J.
Lenahan, P. M.
Lelis, A. J.
2008 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2008, : 68 - +
[35] Datasheet Driven Turn Off Overvoltage Prediction for Silicon Carbide Power MOSFETs Based on Theoretical Analysis
Qian, Cheng
Ge, Yuxin
Wang, Zhigiang
Kang, Yong
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 532 - 536
[36] Temperature Dependence of Terrestrial Neutron Induced Failures in Commercial Silicon and Silicon Carbide Power MOSFETs
Principato, Fabio
Cazzaniga, Carlo
Kastriotou, Maria
Frost, Christopher
Buttacavoli, Antonino
Abbene, Leonardo
Pintacuda, Francesco
2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS, 2022, : 28 - 31
[37] A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs
Sreejith, S.
Ajayan, J.
Devasenapati, S. Babu
Sivasankari, B.
Tayal, Shubham
SILICON, 2023, 15 (02) : 623 - 637
[38] A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
Romano, Gianpaolo
Fayyaz, Asad
Riccio, Michele
Maresca, Luca
Breglio, Giovanni
Castellazzi, Alberto
Irace, Andrea
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) : 978 - 987
[39] Investigation of Single-Event Damages on Silicon Carbide (SiC) power MOSFETs
Mizuta, Eiichi
Kuboyama, Satoshi
Abe, Hiroshi
Iwata, Yoshiyuki
Tamura, Takashi
2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2013,
[40] Realization of a Planar Power Circuit With Silicon Carbide MOSFETs on Printed Circuit Board
Risseh, Arash Edvin
Nee, Hans-Peter
Kostov, Konstantin
2018 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION (SPEEDAM), 2018, : 1079 - 1083

← 1 2 3 4 5 →