EBIC characterization of light-emitting structures based on GaN

被引：9
|
作者：
Shmidt, N. M. [1 ]
Vergeles, P. S.
Yakimov, E. B.
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607040264
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
EBIC investigations of light-emitting structures based on InGaN/GaN MQW with different numbers of wells have been carried out. A pronounced dependence of collection efficiency on quantum-well number is observed. A comparison with apparent carrier profiles calculated from C-V curves reveals a correlation between the collection efficiency and location of quantum well inside the depletion region. Defects producing bright EBIC contrast are revealed in the structure with five quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells.
引用
收藏
页码：491 / 494
页数：4
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