Random telegraph noise in GaN-based light-emitting diodes

被引：3
|
作者：
Kang, T. [1 ,2 ]
Park, J. [1 ,2 ]
Lee, J. -K. [1 ,2 ]
Kim, G. [1 ,2 ]
Woo, D. [1 ,2 ]
Son, J. K. [1 ,2 ]
Lee, J. -H. [1 ,2 ]
Park, B. -G. [1 ,2 ]
Shin, H. [1 ,2 ]
机构：
[1] Seoul Natl Univ, ISRC, Sch Nanosci & Technol, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 15期
关键词：
LOW-FREQUENCY NOISE;
D O I：
10.1049/el.2011.1439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
引用
收藏
页码：873 / U1962
页数：2
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