Random telegraph noise in GaN-based light-emitting diodes

被引：3
|
作者：
Kang, T. [1 ,2 ]
Park, J. [1 ,2 ]
Lee, J. -K. [1 ,2 ]
Kim, G. [1 ,2 ]
Woo, D. [1 ,2 ]
Son, J. K. [1 ,2 ]
Lee, J. -H. [1 ,2 ]
Park, B. -G. [1 ,2 ]
Shin, H. [1 ,2 ]
机构：
[1] Seoul Natl Univ, ISRC, Sch Nanosci & Technol, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 15期
关键词：
LOW-FREQUENCY NOISE;
D O I：
10.1049/el.2011.1439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
引用
收藏
页码：873 / U1962
页数：2
相关论文
共 50 条
  • [41] Influence of plasma treatment on performances of the GaN-based light-emitting diodes
    Beijing Optoelectronic Technology Lab., College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
    Beijing Gongye Daxue Xuebao J. Beijing Univ. Technol., 2008, 7 (682-687):
  • [42] Dependence of leakage current on dislocations in GaN-based light-emitting diodes
    Li, DS
    Chen, H
    Yu, HB
    Jia, HQ
    Huang, Q
    Zhou, JM
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (02) : 1111 - 1114
  • [43] Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes
    Chen, Lung-Chien
    Tien, Ching-Ho
    Luo, Yi-Min
    Mu, Chien-Sheng
    THIN SOLID FILMS, 2011, 519 (08) : 2516 - 2519
  • [44] Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes
    Jung, Eunjin
    Kim, Seongjun
    Kim, Hyunsoo
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 277 - 279
  • [45] Effects of current spreading on the performance of GaN-based light-emitting diodes
    Kim, H
    Park, SJ
    Hwang, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) : 1065 - 1069
  • [46] Forward tunneling current in GaN-based blue light-emitting diodes
    Yan, Dawei
    Lu, Hai
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    APPLIED PHYSICS LETTERS, 2010, 96 (08)
  • [47] GaN-based light-emitting diodes with embedded air void arrays
    Shen, Yue
    Li, Shuguang
    Kuo, De-Shan
    Chang, Shoou-Jinn
    Lam, Kin-Tak
    Wen, Kuo-Hsun
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (04):
  • [48] Study of GaN-based Light-emitting Diodes with Double Roughened Surfaces
    Yang, Lianqiao
    Hu, Jianzheng
    Zhang, Jianhua
    2011 12TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY AND HIGH DENSITY PACKAGING (ICEPT-HDP), 2011, : 753 - 755
  • [49] Optically functional surface structures for GaN-based light-emitting diodes
    Ma, Ming
    Cho, Jaehee
    Schubert, E. Fred
    Kim, Gi Bum
    Sone, Cheolsoo
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (48) : 8134 - 8139
  • [50] Sapphire substrate processing for high-performance GaN-based light-emitting diodes - Micropatterning of sapphire substrates and its effect on light enhancement in GaN-based light-emitting diodes
    Aota, Natsuko (n-aota@namiki.net), 1600, M Y U Scientific Publishing Division (26):
12345