Random telegraph noise in GaN-based light-emitting diodes

被引：3
|
作者：
Kang, T. [1 ,2 ]
Park, J. [1 ,2 ]
Lee, J. -K. [1 ,2 ]
Kim, G. [1 ,2 ]
Woo, D. [1 ,2 ]
Son, J. K. [1 ,2 ]
Lee, J. -H. [1 ,2 ]
Park, B. -G. [1 ,2 ]
Shin, H. [1 ,2 ]
机构：
[1] Seoul Natl Univ, ISRC, Sch Nanosci & Technol, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 15期
关键词：
LOW-FREQUENCY NOISE;
D O I：
10.1049/el.2011.1439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.
引用
收藏
页码：873 / U1962
页数：2
相关论文
共 50 条
  • [21] GaN-based light-emitting diodes using tunnel junctions
    Jeon, SR
    Cho, MS
    Yu, MA
    Yang, GM
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) : 739 - 743
  • [22] GaN-based ultraviolet light-emitting diodes with multifinger contacts
    Rodriguez, Hernan
    Lobo, Neysha
    Einfeldt, Sven
    Knauer, Arne
    Weyers, Markus
    Kneissl, Michael
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (11): : 2585 - 2588
  • [23] Electron leakage effects on GaN-based light-emitting diodes
    Piprek, Joachim
    Li, Simon
    OPTICAL AND QUANTUM ELECTRONICS, 2010, 42 (02) : 89 - 95
  • [24] Tailoring the performance of GaN-based yellow light-emitting diodes
    Usman, Muhammad
    Khan, Sibghatullah
    Saeed, Sana
    Ali, Shazma
    PHYSICA B-CONDENSED MATTER, 2023, 650
  • [25] Enhanced electroluminescent cooling in GaN-based light-emitting diodes
    Piprek, Joachim
    Li, Zhan-Ming
    SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX, 2017, 10107
  • [26] GaN-based green resonant cavity light-emitting diodes
    Huang, Shih-Yung
    Horng, Ray-Hua
    Wang, Wei-Kai
    Wuu, Don-Sing
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3433 - 3435
  • [27] Monolithic integration of GaN-based phototransistors and light-emitting diodes
    Yeh, Pinghui S.
    Chiu, Yu-Chieh
    Wu, Tsung-Che
    Chen, Yan-Xiang
    Wang, Tzu-Hsun
    Chou, Tzu-Chieh
    OPTICS EXPRESS, 2019, 27 (21) : 29854 - 29862
  • [28] Origin of efficiency droop in GaN-based light-emitting diodes
    Kim, Min-Ho
    Schubert, Martin F.
    Dai, Qi
    Kim, Jong Kyu
    Schubert, E. Fred
    Piprek, Joachim
    Park, Yongjo
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [29] Green gap in GaN-based light-emitting diodes: in perspective
    Usman, Muhammad
    Munsif, Munaza
    Mushtaq, Urooj
    Anwar, Abdur-Rehman
    Muhammad, Nazeer
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2021, 46 (05) : 450 - 467
  • [30] Simulation of current spreading for GaN-based light-emitting diodes
    Wang, Pei
    Wei, Wei
    Cao, Bin
    Gan, Zhiyin
    Liu, Sheng
    OPTICS AND LASER TECHNOLOGY, 2010, 42 (05): : 737 - 740
12345