Brightness of blue GaN-based light-emitting diodes

被引：0
|
作者：
Grushko, N. S. [1 ]
Lakalin, A. V. [1 ]
Solonin, A. P. [1 ]
机构：
[1] Ulyanovsk State Univ, Ulyanovsk 432970, Russia
来源：
INORGANIC MATERIALS | 2008年 / 44卷 / 02期
关键词：
Versus Curve; Nitrogen Dioxide; Gallium Nitride; Brightness Characteristic; Emission Propagation;
D O I：
10.1134/S0020168508020106
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the brightness characteristics of KPT-1608PBC (SMD) blue light emitting diodes and the key features of emission propagation through the SMD case. The luminosity pattern of the diode is presented. The external quantum yield is determined as a function of the current through the diode, and the quantum yield is shown to correlate with the mechanism responsible for the recombination current.
引用
收藏
页码：139 / 141
页数：3
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