Tandem InGaN/GaN light-emitting diodes

被引：0
|
作者：
Zhu, Binbin [1 ,2 ]
Liu, Wei [1 ]
Zhang, Zi-Hui [1 ]
Tan, Swee Tiam [1 ]
Sun, Xiao Wei [1 ]
Demir, Hilmi Volkan [1 ,2 ,3 ]
机构：
[1] Nanyang Technol Univ, Photon Inst, Luminous Ctr Semicond Lighting & Displays, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore
[3] Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, Dept Phys, TR-06800 Ankara, Turkey
来源：
2015 PHOTONICS CONFERENCE (IPC) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tandem LEDs in which active regions are connected by tunnel junctions show extraordinary efficiency improvement when compared with traditional LEDs and this is explained by relatively reduced forward voltage and more uniform carrier distribution.
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页数：2
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