EBIC characterization of light-emitting structures based on GaN

EBIC investigations of light-emitting structures based on InGaN/GaN MQW with different numbers of wells have been carried out. A pronounced dependence of collection efficiency on quantum-well number is observed. A comparison with apparent carrier profiles calculated from C-V curves reveals a correlation between the collection efficiency and location of quantum well inside the depletion region. Defects producing bright EBIC contrast are revealed in the structure with five quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells.