High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

被引:45
|
作者
Candini, Andrea [1 ]
Martini, Leonardo [1 ,2 ]
Chen, Zongping [3 ]
Mishra, Neeraj [4 ]
Convertino, Domenica [4 ,5 ]
Coletti, Camilla [4 ,6 ]
Narita, Akimitsu [3 ]
Feng, Xinliang [7 ,8 ]
Muellen, Klaus [3 ]
Affronte, Marco [1 ,2 ]
机构
[1] CNR, Ist Nanosci, Ctr S3, Via G Campi 213-A, I-41125 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Sci Fis Matemat & Informat, Via G Campi 213-A, I-41125 Modena, Italy
[3] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[4] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[5] Scuola Normale Super Pisa, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[6] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
[7] Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, D-01062 Dresden, Germany
[8] Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 19期
关键词
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; CARBON NANOTUBES; PHOTODETECTORS; PHOTOTRANSISTORS; HETEROJUNCTIONS; MOS2; GAIN;
D O I
10.1021/acs.jpcc.7b03401
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 x 10(5) A/W for small incident power in the visible-UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.
引用
收藏
页码:10620 / 10625
页数:6
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