High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

被引:45
|
作者
Candini, Andrea [1 ]
Martini, Leonardo [1 ,2 ]
Chen, Zongping [3 ]
Mishra, Neeraj [4 ]
Convertino, Domenica [4 ,5 ]
Coletti, Camilla [4 ,6 ]
Narita, Akimitsu [3 ]
Feng, Xinliang [7 ,8 ]
Muellen, Klaus [3 ]
Affronte, Marco [1 ,2 ]
机构
[1] CNR, Ist Nanosci, Ctr S3, Via G Campi 213-A, I-41125 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Sci Fis Matemat & Informat, Via G Campi 213-A, I-41125 Modena, Italy
[3] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[4] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[5] Scuola Normale Super Pisa, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[6] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
[7] Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, D-01062 Dresden, Germany
[8] Tech Univ Dresden, Dept Chem & Food Chem, D-01062 Dresden, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2017年 / 121卷 / 19期
关键词
CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; CARBON NANOTUBES; PHOTODETECTORS; PHOTOTRANSISTORS; HETEROJUNCTIONS; MOS2; GAIN;
D O I
10.1021/acs.jpcc.7b03401
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 x 10(5) A/W for small incident power in the visible-UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.
引用
收藏
页码:10620 / 10625
页数:6
相关论文
共 50 条
  • [21] Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review
    Green, Nathaniel S.
    Norton, Michael L.
    ANALYTICA CHIMICA ACTA, 2015, 853 : 127 - 142
  • [22] Simulation of graphene nanoribbon field-effect transistors
    Fiori, Gianluca
    Iannaccone, Giuseppe
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 760 - 762
  • [23] Graphene field-effect devices
    Echtermeyer, T. J.
    Lemme, M. C.
    Bolten, J.
    Baus, M.
    Ramsteiner, M.
    Kurz, H.
    EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2007, 148 (1): : 19 - 26
  • [24] Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve fT
    Al-Amin, C.
    Karabiyik, M.
    Pala, N.
    MICROELECTRONIC ENGINEERING, 2016, 164 : 71 - 74
  • [25] Graphene field-effect devices
    T. J. Echtermeyer
    M. C. Lemme
    J. Bolten
    M. Baus
    M. Ramsteiner
    H. Kurz
    The European Physical Journal Special Topics, 2007, 148 : 19 - 26
  • [26] Graphene Field-Effect Transistor for Biosensor
    Matsumoto, Kazuhiko
    Hayashi, Ryota
    Kanai, Yasushi
    Inoue, Koichi
    Ono, Takao
    2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2016, : 45 - 46
  • [27] Graphene Junction Field-Effect Transistor
    Ou, Tzu-Min
    Borsa, Tomoko
    Van Zeghbroeck, Bart
    2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 139 - 140
  • [28] Performance Evaluation of Dual-Channel Armchair Graphene Nanoribbon Field-Effect Transistor
    Azman, Adila Syaidatul
    Johari, Zaharah
    Ismail, Razali
    2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 138 - 141
  • [29] Numerical Study of a New Junctionless Tunneling Field-Effect Transistor Based on Graphene Nanoribbon
    Tamersit, Khalil
    Djeffal, Faycal
    2019 IEEE INTERNATIONAL CONFERENCE ON DESIGN & TEST OF INTEGRATED MICRO & NANO-SYSTEMS (DTS), 2019,
  • [30] Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor
    Sun, Jian
    Iwasaki, Takuya
    Muruganathan, Manoharan
    Mizuta, Hiroshi
    APPLIED PHYSICS LETTERS, 2015, 106 (03)