A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

被引：2
|
作者：
Chen, E. [1 ]
Sanchez-Soares, A. [2 ]
Kelly, T. [2 ]
Fagas, G. [2 ]
Greer, J. C. [3 ]
机构：
[1] TSMC, Corp Res, Hsinchu, Taiwan
[2] EOLAS Designs, Cork, Ireland
[3] Univ Nottingham Ningbo China, Ningbo, Peoples R China
来源：
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021) | 2021年
关键词：
Dirac source; graphene nanoribbon; Sub-k(B)T/q; DoS filtering; ultra-low V-DD applications;
D O I：
10.1109/SISPAD54002.2021.9592541
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A sub-k(B)T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing k.p electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the source contact is explored by shifting its Fermi level via variations on doping concentration. An optimized design achieves a minimum subthreshold swing (SS) of 42 mV/dec and sub-60mV/dec operation across three orders of I-D magnitude.
引用
收藏
页码：98 / 101
页数：4
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