A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

被引：2

作者：

Chen, E. ^{[1
]}

Sanchez-Soares, A. ^{[2
]}

Kelly, T. ^{[2
]}

Fagas, G. ^{[2
]}

Greer, J. C. ^{[3
]}

机构：

[1] TSMC, Corp Res, Hsinchu, Taiwan

[2] EOLAS Designs, Cork, Ireland

[3] Univ Nottingham Ningbo China, Ningbo, Peoples R China

来源：

2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021) | 2021年

关键词：

Dirac source; graphene nanoribbon; Sub-k(B)T/q; DoS filtering; ultra-low V-DD applications;

D O I：

10.1109/SISPAD54002.2021.9592541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A sub-k(B)T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing k.p electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the source contact is explored by shifting its Fermi level via variations on doping concentration. An optimized design achieves a minimum subthreshold swing (SS) of 42 mV/dec and sub-60mV/dec operation across three orders of I-D magnitude.

引用

页码：98 / 101

页数：4

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