On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam

被引：1
|
作者：
Kucheev, S. I. [1 ]
Tuchina, Yu. S. [1 ]
机构：
[1] Belgorod State Univ, Belgorod 308015, Russia
来源：
TECHNICAL PHYSICS | 2010年 / 55卷 / 06期
关键词：
LIQUID-CRYSTALS; ALIGNMENT;
D O I：
10.1134/S1063784210060253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Preliminary results of studying the orientation of a 5CB nematic on the single-crystalline silicon surface processed by a 30-keV focused Ga ion beam ar e reported. It is shown that the nematic can be controllably imparted on a homeotropic or inclined orientation depending on the surface irradiation dose. By varying the scanning raster of the ion beam, one can obtain different surface patterns with a micrometer resolution and a desired orientation of the nematic.
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收藏
页码：883 / 886
页数：4
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