On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam

被引：1

作者：

Kucheev, S. I. ^{[1
]}

Tuchina, Yu. S. ^{[1
]}

机构：

[1] Belgorod State Univ, Belgorod 308015, Russia

来源：

TECHNICAL PHYSICS | 2010年 / 55卷 / 06期

关键词：

LIQUID-CRYSTALS; ALIGNMENT;

D O I：

10.1134/S1063784210060253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Preliminary results of studying the orientation of a 5CB nematic on the single-crystalline silicon surface processed by a 30-keV focused Ga ion beam ar e reported. It is shown that the nematic can be controllably imparted on a homeotropic or inclined orientation depending on the surface irradiation dose. By varying the scanning raster of the ion beam, one can obtain different surface patterns with a micrometer resolution and a desired orientation of the nematic.

引用

页码：883 / 886

页数：4

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