S-band Discrete and MMIC GaN Power Amplifiers

被引：0
|
作者：
Nilsson, Joakim [1 ]
Billstrom, Niklas [1 ]
Rorsman, Niklas [2 ]
Romanini, Paolo [3 ]
机构：
[1] Saab AB, Microwave & Antennas, Saab Microwave Syst, SE-41289 Gothenburg, Sweden
[2] Chalmers, Gothenburg, Sweden
[3] SELEX Sistemi Integrati, Rome, Italy
来源：
2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 mu m GaN HEMT process supplied and processed by Chalmers.
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页码：1848 / +
页数：2
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