K-Band Power Amplifiers in a 100 nm GaN HEMT Microstrip Line MMIC Technology

被引：8

作者：

Friesicke, C. ^{[1
]}

Jacob, A. F. ^{[1
]}

Quay, R. ^{[2
]}

机构：

[1] Tech Univ Hamburg, Inst Hochfrequenztech, Hamburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys, Freiburg, Germany

来源：

2014 20TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR, AND WIRELESS COMMUNICATION (MIKON) | 2014年

关键词：

Gallium nitride; high power amplifiers; MMICs; K-band; satellite communication; ALGAN/GAN HEMT;

D O I：

10.1109/MIKON.2014.6899877

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). They are realized using a 100 nm AlGaN/GaN HEMT technology which, in addition to coplanar lines, supports microstrip lines to cover the needs of applications between X- and Ka-band frequencies. The presented MMICs are among the first power amplifiers designed with the microstrip library and are used to evaluate the technology's performance at K-band. Both amplifiers are singlestage designs, where one uses only a single 8x 75,um HEMT cell and the other one uses two cells with power-combining. In largesignal measurements, the amplifiers reached, respectively, peak efficiencies of 36% and 38% associated with output powers of 0.93W and 1.48W and drain efficiencies of 61% and 51%.

引用

页数：4

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