40 dBm AlGaN/GaN HEMT Power Amplifier MMIC for SatCom Applications at K-Band

被引：25

作者：

Friesicke, C. ^{[1
]}

Feuerschuetz, P. ^{[1
]}

Quay, R. ^{[2
]}

Ambacher, O. ^{[2
]}

Jacob, A. F. ^{[1
]}

机构：

[1] Tech Univ Hamburg, Inst Hochfrequenztech, Denickestr 22, D-21073 Hamburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

Gallium nitride; high power amplifiers; K-band; MMICs; satellite communication;

D O I：

10.1109/MWSYM.2016.7540203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design, realization, and characterization of a K-band high power amplifier with a saturated output power of 40dBm is described in this paper. The amplifier is realized using a 250nm gate length AlGaN/GaN HEMT MMIC technology on semi-insulating SiC substrates. The two-stage amplifier is designed with two 6x90 mu m HEMT cells in the driver and four 8x100 mu m HEMT cells in the final stage and thus exhibits a relatively aggressive staging ratio of 1:3. When measured with a supply voltage of 32V, the amplifier delivers a saturated output power of 40dBm at 18 GHz. The peak PAE at this frequency is 30%, and the linear gain exceeds 20 dB. These results are state-of-the-art performance with regard to power/efficiency at K-band.

引用

页数：4

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