A K-band AlGaN/GaN-based MMIC Amplifier with Microstrip Lines on Sapphire

被引：0

作者：

Murata, Tomohiro ^{[1
]}

Kuroda, Masayuki ^{[1
]}

Nagai, Shuichi ^{[2
]}

Nishijima, Masaaki ^{[1
]}

Ishida, Hidetoshi ^{[1
]}

Yanagihara, Manabu ^{[1
]}

Ueda, Tetsuzo ^{[1
]}

Sakai, Hiroyuki ^{[1
]}

Tanaka, Tsuyoshi ^{[1
]}

Li, Ming ^{[2
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, 1 Kotari Yakemachi, Nagaokakyo, Kyoto 6178520, Japan

[2] Panasonic Tech Co, Panasonic Boston Lab, Cambridge, MA 02142 USA

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

AlGaN/GaN heterojunction FET; superlattices; MMIC amplifiers; sapphire; via hole; laser drilling; microstrip line;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a K-band AlGaN/GaN HFET MMIC amplifier with integrated microstrip lines on sapphire. The microstrip lines with via-holes through chemically stable sapphire are successfully formed for the first time by using a novel laser drilling technique. AlGaN/GaN HFETs with superlattice capping layers in the MMIC exhibit RF performance with f(max) of 160GHz and NFmin of 2.5dB at 28GHZ. The fabricated 3-stage MMIC amplifier exhibits a small-signal gain as high as 22dB at 26GHz with a 3dB bandwidth of 4GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems.

引用

页码：845 / +

页数：2

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