An Efficient AlGaN/GaN HEMT Power Amplifier MMIC at K-Band

被引：0
|
作者：
Friesicke, C. [1 ]
Kuehn, J. [2 ]
Brueckner, P. [2 ]
Quay, R. [2 ]
Jacob, A. F. [1 ]
机构：
[1] Tech Univ Hamburg, Inst Hochfrequenztech, Denickestr 22, D-21073 Hamburg, Germany
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 mu m AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.
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页码：131 / 134
页数：4
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