First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology

被引：0
|
作者：
Potier, C. [1 ]
Piotrowicz, S. [1 ]
Patard, O. [1 ]
Gamarra, P. [1 ]
Altuntas, P. [1 ]
Chartier, E. [1 ]
Dua, C. [1 ]
Jacquet, J. C. [1 ]
Lacam, C. [1 ]
Michel, N. [1 ]
Oualli, M. [1 ]
Delage, S. L. [1 ]
Chang, C. [2 ]
Gruenenpuett, J. [3 ]
机构：
[1] III V Lab, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France
[2] UMS SAS, 10 Ave Quebec, F-91140 Villebon Sur Yvette, France
[3] UMS Gmbh, Wilhelm Runge Str 11, D-89081 Ulm, Germany
来源：
INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2018年
关键词：
MMIC; HEMT; GaN; Ka Band; InAlGaN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwidth of [27.5-31]GHz and [37-39.5]GHz, respectively and demonstrate over these bandwidths a saturated output power of 40dBm and 38dBm, respectively. Each stage use 8x50 mu m gate width HEMTs fabricated with a 0.15 mu m gate length on 70 mu m thick SiC substrate.
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页数：3
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