10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

被引：0

作者：

Potier, C. ^{[1
]}

Piotrowicz, S. ^{[1
]}

Chang, C. ^{[2
]}

Patard, O. ^{[1
]}

Trinh-Xuan, L. ^{[3
]}

Gruenenpuett, J. ^{[3
]}

Gamarra, P. ^{[1
]}

Altuntas, P. ^{[1
]}

Chartier, E. ^{[1
]}

Jacquet, J-C ^{[1
]}

Lacam, C. ^{[1
]}

Michel, N. ^{[1
]}

Dua, C. ^{[1
]}

Oualli, M. ^{[1
]}

Delage, S. L. ^{[1
]}

机构：

[1] III V Lab, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[2] UMS SAS, 10 Ave Quebec, F-91140 Villebon Sur Yvette, France

[3] UMS Gmbh, Wilhelm Runge Str 11, D-89081 Ulm, Germany

来源：

2019 49TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2019年

关键词：

MMICs; HEMTs; Gallium nitride; Ka-band; InAlGaN; GaN;

D O I：

10.23919/eumc.2019.8910887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31]GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50 mu m gate width HEMTs fabricated with a 0.15 mu m gate length on 70 mu m thick SiC substrate.

引用

页码：824 / 827

页数：4

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