0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

被引：0
|
作者：
Krishnamurthy, K. [1 ]
Green, D. [1 ]
Vetury, R. [1 ]
Poulton, M. [1 ]
Martin, J. [1 ]
机构：
[1] RF Micro Devices Inc, High Power Prod Line, Charlotte, NC 28269 USA
来源：
2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009 | 2009年
关键词：
Broadband amplifiers; Gallium Nitride (GaN); High-electron-mobility transistors (HEMTs); Power Amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48V drain supply and is packaged in a ceramic 508 package. These amplifiers are intended for use in wideband digital communication applications.
引用
收藏
页码：69 / 72
页数：4
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