S-band MMIC amplifier design using HEMT

被引：0
|
作者：
Yang, Xuebin [1 ]
Lu, Shanwei [1 ]
Su, Donglin [1 ]
机构：
[1] Beijing Univ of Aeronautics and, Astronautics, Beijing, China
来源：
Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics | 2000年 / 26卷 / 03期
关键词：
Computer simulation - Design - High electron mobility transistors - Microwave integrated circuits - Stability;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The design procedure of S-band monolithic microwave integrated circuit (MMIC) amplifier using high electron mobility transistor (HEMT) was proposed. The topology of the circuit was taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. The simulation results show that the design can meet the practical requirement.
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页码：290 / 292
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