Systematic evaluation of SOI Buried Oxide Reliability for Partially Depleted and Fully Depleted applications

被引：0

作者：

Schwarzenbach, W. ^{[1
]}

Malaquin, C. ^{[1
]}

Allibert, F. ^{[1
]}

Besnard, G. ^{[1
]}

Nguyen, B. -Y. ^{[1
]}

机构：

[1] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France

来源：

2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2015年

关键词：

Fully Depleted SOI; Partially Depleted SOI; BOX Breakdown; Leakage current;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

SOI Buried Oxide (BOX) electrical quality is assessed through Charge to Breakdown, Breakdown Voltage, low field leakage, BOX fixed charge density and BOX/ Si interface trap density measurements. Breakdown electrical field higher than 10 MV. cm(-1) and 10 years lifetime at operating voltages in excess of 16V are reported on thin BOX layers.

引用

页数：3

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