A continuous compact MOSFET model for fully- and partially-depleted SOI devices

被引：45
|
作者：
Sleight, JW [1 ]
Rios, R
机构：
[1] Digital Equipment Corp, Semicond, Technol Dev Grp, Hudson, MA 01749 USA
[2] Intel Corp, Hillsboro, OR 97124 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期
关键词：
FD; PD; SOI;
D O I：
10.1109/16.662786
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented, Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation.
引用
收藏
页码：821 / 825
页数：5
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