A compact SOI model for fully-depleted and partially-depleted 0.25um SIMOX devices

被引：0

作者：

Chen, P ^{[1
]}

Liu, ZH ^{[1
]}

Yeh, CS ^{[1
]}

Zhang, G ^{[1
]}

Nishimura, K ^{[1
]}

Shimaya, M ^{[1
]}

Komatsu, T ^{[1
]}

机构：

[1] BTA Technol Inc, Santa Clara, CA 95054 USA

来源：

ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Compact SOI MOSFET mode based on the Bsim3v3 bulk model with new feature of effective substrate bias and transition voltage concept to cover the transition behaviors from partially-depleted to fully-depleted modes, Rout smoothing, enhanced models for impact ionization, Leff-dependent parasitic BJT and self-heating is proposed. Results obtained from this model are in excellent agreement with the experimental I-V, C-V and propagation-delay time data.

引用

页码：222 / 226

页数：5

共 50 条

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