Subthreshold Performance of Double-gate Accumulation-mode P-channel SOI MOSFET

被引：0

作者：

Zhang Zhengfan ^{[1
,2
]}

Li Zhaoji ^{[1
]}

Tan Kaizhou ^{[2
]}

Zhang Jiabin ^{[2
]}

Li Kaicheng ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China

[2] NLAIC, Chongqing 400060, Peoples R China

来源：

2007 5TH INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion's equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the Interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the Interface trap density with subthreshold swing is proposed..

引用

页码：647 / +

页数：2

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