Analytical study on small contact hole process for sub-65 nm node generation

被引：2
|
作者：
Kim, HW [1 ]
Yoon, JY [1 ]
Hah, JH [1 ]
Woo, SG [1 ]
Cho, HK [1 ]
Moon, JT [1 ]
机构：
[1] Samsung Elect, Proc Dev Team, Semicond R&D Ctr, Yongin 499711, Gyeonggi Do, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期
关键词：
D O I：
10.1116/1.1815315
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Small contact hole process for sub-65 nm node generation was analysed analytically. The ArF pattern-shrink techniques were evaluated for contact hole patterning using ArF lithography. It was observed that the isolated contact holes shrinked faster than the nested holes in thermal flow and the effect was reversed in 'shrink assist films for enhanced resolution' (SAFIER) technique. It was found that the most feasible shrink process for sub-80 nm contact hole patterning can be classified as Table II for Arf lithography.
引用
收藏
页码：L38 / L43
页数：6
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